IPP111N15N3 stock, IPP111N15N3, IPP111N15N3GXKSA1


PartNumber	IPP111N15N3GXKSA1	IPP111N15N3 G
Description	MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3	MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	150 V	150 V
Id Continuous Drain Current	83 A	83 A
Rds On Drain Source Resistance	9.4 mOhms	9.4 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	55 nC	55 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	214 W	214 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Tube	Tube
Height	15.65 mm	15.65 mm
Length	10 mm	10 mm
Series	OptiMOS 3	OptiMOS 3
Transistor Type	1 N-Channel	1 N-Channel
Width	4.4 mm	4.4 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	47 S	47 S
Fall Time	9 ns	9 ns
Product Type	MOSFET	MOSFET
Rise Time	35 ns	35 ns
Factory Pack Quantity	500	500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	32 ns	32 ns
Typical Turn On Delay Time	17 ns	17 ns
Part # Aliases	G IPP111N15N3 IPP111N15N3GXK SP000677860	IPP111N15N3GXK IPP111N15N3GXKSA1 SP000677860
Unit Weight	0.211644 oz	0.211644 oz

Search Part Number : "IPP111N15N3", Match & Start with "IPP111N15N3" - Total : 8

製造商	型號	描述
Infineon Technologies	IPP111N15N3GXKSA1	MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
	IPP111N15N3 G	MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
	IPP111N15N3GXKSA1	MOSFET N-CH 150V 83A TO220-3
	IPP111N15N3 G	IGBT Transistors MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
	IPP111N15N3	全新原裝
	IPP111N15N3G	全新原裝
	IPP111N15N3G 111N15N	全新原裝
	IPP111N15N3GXKSA1 , 2SD8	全新原裝

IPP111N15N3