IPP60R160P

IPP60R160P6XKSA1 vs IPP60R160P6 vs IPP60R160P7XKSA1

 
PartNumberIPP60R160P6XKSA1IPP60R160P6IPP60R160P7XKSA1
DescriptionMOSFET HIGH POWER_LEGACYMOSFET HIGH POWER_LEGACYMOSFET
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current23.8 A23.8 A-
Rds On Drain Source Resistance144 mOhms144 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V3.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge44 nC44 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation176 W176 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingTubeTubeTube
Height15.65 mm15.65 mm-
Length10 mm10 mm-
SeriesCoolMOS P6CoolMOS P6-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time5.8 ns5.8 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time7.6 ns7.6 ns-
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time12.5 ns12.5 ns-
Part # AliasesIPP60R160P6 SP001017068IPP60R160P6XKSA1 SP001017068SP001866174
Unit Weight0.211644 oz0.211644 oz-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPP60R160P6XKSA1 MOSFET HIGH POWER_LEGACY
IPP60R160P6 MOSFET HIGH POWER_LEGACY
IPP60R160P7XKSA1 MOSFET
IPP60R160P6XKSA1 MOSFET N-CH 600V TO220-3
IPP60R160P6 Trans MOSFET N-CH 650V 23.8A 3-Pin TO-220 Tube (Alt: IPP60R160P6)
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