 | | |
| PartNumber | IPP80N06S207AKSA4 | IPP80N06S207AKSA1 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 80A TO220-3 OptiMOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | - |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPP80N06S2-07 SP001067876 | IPP80N06S2-07 IPP80N06S207XK SP000218810 |
| Unit Weight | 0.211644 oz | 0.063493 oz |
| RoHS | - | Y |
| Vds Drain Source Breakdown Voltage | - | 55 V |
| Id Continuous Drain Current | - | 80 A |
| Rds On Drain Source Resistance | - | 5.6 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2.1 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 110 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 250 W |
| Channel Mode | - | Enhancement |
| Series | - | XPP80N06 |
| Fall Time | - | 36 ns |
| Rise Time | - | 37 ns |
| Typical Turn Off Delay Time | - | 61 ns |
| Typical Turn On Delay Time | - | 16 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP80N06S207AKSA4 | MOSFET N-CHANNEL_55/60V | |
| IPP80N06S207AKSA4 | MOSFET N-CH 55V 80A TO220-3 | ||
| IPP80N06S207AKSA1 | MOSFET N-CH 55V 80A TO220-3 | ||
Infineon Technologies |
IPP80N06S207AKSA1 | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | |
| IPP80N06S207AKSA2 | MOSFET |