IPS65R1K0CE

IPS65R1K0CEAKMA2 vs IPS65R1K0CE vs IPS65R1K0CEAKMA1

 
PartNumberIPS65R1K0CEAKMA2IPS65R1K0CEIPS65R1K0CEAKMA1
DescriptionMOSFET CONSUMERMOSFET N-CH 650V 4.3A TO-251-3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleSMD/SMT-
Package / CasePG-TO-251-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current7.2 A--
Rds On Drain Source Resistance1 Ohms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge15.3 nC--
Minimum Operating Temperature- 55 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation68 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Transistor Type1 N-Channel1 N-Channel-
BrandInfineon Technologies--
Fall Time13.6 ns13.6 ns-
Product TypeMOSFET--
Rise Time5.2 ns5.2 ns-
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns41 ns-
Typical Turn On Delay Time6.6 ns6.6 ns-
Part # AliasesIPS65R1K0CE SP001724356--
Part Aliases-IPS65R1K0CE SP001276048-
Unit Weight-0.012102 oz-
Tradename-CoolMOS-
Package Case-TO-251-3-
Pd Power Dissipation-37 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-4.3 A-
Vds Drain Source Breakdown Voltage-600 V-
Vgs th Gate Source Threshold Voltage-2.5 V-
Rds On Drain Source Resistance-1 Ohms-
Qg Gate Charge-15.3 nC-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPS65R1K0CEAKMA2 MOSFET CONSUMER
IPS65R1K0CEAKMA2 CONSUMER - Rail/Tube (Alt: IPS65R1K0CEAKMA2)
IPS65R1K0CEAKMA1 MOSFET N-CH 650V 4.3A TO-251-3
IPS65R1K0CE 全新原裝
IPS65R1K0CE . 全新原裝
IPS65R1K0CE(1) 全新原裝
IPS65R1K0CEAKMA1 , 2SJ16 全新原裝
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