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| PartNumber | IPS65R1K5CEAKMA1 | IPS65R1K5CE | IPS65R1K5CEAKMA1 , 2SJ18 |
| Description | MOSFET N-Ch 650V 3.1A IPAK-3 | 650V CoolMOS CE Power Transisto | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 3.1 A | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 10.5 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 28 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | CoolMOS CE | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.38 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 18.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.9 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 7.7 ns | - | - |
| Part # Aliases | IPS65R1K5CEAKMA1 SP001276050 | - | - |
| Unit Weight | 0.012102 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPS65R1K5CEAKMA1 | MOSFET N-Ch 650V 3.1A IPAK-3 | |
| IPS65R1K5CE | 650V CoolMOS CE Power Transisto | ||
| IPS65R1K5CEAKMA1 , 2SJ18 | 全新原裝 | ||
Infineon Technologies |
IPS65R1K5CEAKMA1 | MOSFET N-CH 650V TO-251-3 |