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| PartNumber | IPU135N08N3 | IPU135N08N3G | IPU135N08N3 G |
| Description | IGBT Transistors MOSFET N-Ch 80V 50A IPAK-3 | ||
| Manufacturer | Infineon Technologies | - | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single | - | Transistors - FETs, MOSFETs - Single |
| Series | IPU135N08 | - | IPU135N08 |
| Packaging | Tube | - | Tube |
| Part Aliases | IPU135N08N3GBKMA1 SP000521642 | - | IPU135N08N3GBKMA1 SP000521642 |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Mounting Style | Through Hole | - | Through Hole |
| Tradename | OptiMOS | - | OptiMOS |
| Package Case | IPAK-3 | - | IPAK-3 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 79 W | - | 79 W |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 5 ns | - | 5 ns |
| Rise Time | 35 ns | - | 35 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 50 A | - | 50 A |
| Vds Drain Source Breakdown Voltage | 80 V | - | 80 V |
| Rds On Drain Source Resistance | 13.5 mOhms | - | 13.5 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 18 ns | - | 18 ns |
| Typical Turn On Delay Time | 12 ns | - | 12 ns |
| Channel Mode | Enhancement | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| IPU135N08N3 | 全新原裝 | ||
| IPU135N08N3G | 全新原裝 | ||
| IPU135N08N3GBKMA1 | 全新原裝 | ||
Infineon Technologies |
IPU135N08N3 G | IGBT Transistors MOSFET N-Ch 80V 50A IPAK-3 |