 |  | | |
| PartNumber | IPU60R1K4C6AKMA1 | IPU60R1K4C6 | IPU60R1K4C6BKMA1 |
| Description | MOSFET N-CH 600V TO-251-3 | Trans MOSFET N-CH 650V 3.2A 3-Pin TO-251 Tube - Bulk (Alt: IPU60R1K4C6) | IGBT Transistors MOSFET N-Ch 650V 3.2A IPAK-3 |
| Manufacturer | Infineon Technologies | - | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single | - | Transistors - FETs, MOSFETs - Single |
| Packaging | Tube | - | Tube |
| Part Aliases | IPU60R1K4C6 SP001292874 | - | IPU60R1K4C6 IPU60R1K4C6XK SP000931530 |
| Package Case | TO-251-3 | - | IPAK-3 |
| Technology | Si | - | Si |
| Series | - | - | IPU60R1 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | CoolMOS |
| Number of Channels | - | - | 1 Channel |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 28.4 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 20 ns |
| Rise Time | - | - | 7 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 3.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 1.4 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 40 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Qg Gate Charge | - | - | 9.4 nC |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPU60R1K4C6AKMA1 | MOSFET N-CH 600V TO-251-3 | |
| IPU60R1K4C6BKMA1 | IGBT Transistors MOSFET N-Ch 650V 3.2A IPAK-3 | ||
| IPU60R1K4C6 | Trans MOSFET N-CH 650V 3.2A 3-Pin TO-251 Tube - Bulk (Alt: IPU60R1K4C6) |