IPU60R9 stock, IPU60R9, IPU60R950C6BKMA1


PartNumber	IPU60R950C6BKMA1	IPU60R950C6AKMA1
Description	MOSFET N-Ch 650V 4.4A IPAK-3	MOSFET LOW POWER_LEGACY
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-251-3	TO-251-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V
Id Continuous Drain Current	4.4 A	4.4 A
Rds On Drain Source Resistance	860 mOhms	860 mOhms
Vgs th Gate Source Threshold Voltage	2.5 V	3 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	13 nC	13 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	37 W	37 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	CoolMOS	CoolMOS
Packaging	Tube	Tube
Height	6.22 mm	6.22 mm
Length	6.73 mm	6.73 mm
Series	IPU60R950	CoolMOS C6
Transistor Type	1 N-Channel	1 N-Channel
Width	2.38 mm	2.38 mm
Brand	Infineon Technologies	Infineon Technologies
Fall Time	13 ns	13 ns
Product Type	MOSFET	MOSFET
Rise Time	8 ns	8 ns
Factory Pack Quantity	1500	1500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	60 ns	60 ns
Typical Turn On Delay Time	10 ns	10 ns
Part # Aliases	IPU60R950C6 IPU60R950C6XK SP000931532	IPU60R950C6AKMA1 SP001292888
Unit Weight	0.012102 oz	0.139332 oz
Forward Transconductance Min	-	-
Development Kit	-	-

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IPU60R9