 |  |  | |
| PartNumber | IPU80R1K2P7AKMA1 | IPU80R1K0CEAKMA1 | IPU80R1K0CEBKMA1 |
| Description | MOSFET | MOSFET CONSUMER | MOSFET N-Ch 800V 5.7A IPAK-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | IPAK-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 37 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Series | CoolMOS P7 | CoolMOS CE | XPU80R1 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 20 ns | - | 8 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | - | 15 ns |
| Factory Pack Quantity | 1500 | 1500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | - | 72 ns |
| Typical Turn On Delay Time | 10 ns | - | 25 ns |
| Part # Aliases | IPU80R1K2P7 SP001644614 | IPU80R1K0CE SP001593928 | - |
| Height | - | 6.22 mm | - |
| Length | - | 6.73 mm | - |
| Width | - | 2.38 mm | - |
| Moisture Sensitive | - | Yes | - |
| Unit Weight | - | 0.011993 oz | 0.012102 oz |
| Part Aliases | - | - | IPU80R1K0CE SP001100624 |
| Package Case | - | - | TO-251-3 |
| Pd Power Dissipation | - | - | 83 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 5.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 800 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 950 mOhms |
| Qg Gate Charge | - | - | 31 nC |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPU80R2K0P7AKMA1 | MOSFET | |
| IPU80R1K2P7AKMA1 | MOSFET | ||
| IPU80R3K3P7AKMA1 | MOSFET | ||
| IPU80R600P7AKMA1 | MOSFET | ||
| IPU80R2K4P7AKMA1 | MOSFET | ||
| IPU80R1K4CEAKMA1 | MOSFET N-CH 800V TO251-3 | ||
| IPU80R2K4P7AKMA1 | MOSFET N-CH 800V 2.5A TO251-3 | ||
| IPU80R2K8CEAKMA1 | MOSFET N-CH 800V TO251-3 | ||
| IPU80R3K3P7AKMA1 | MOSFET N-CH 800V 1.9A TO251-3 | ||
| IPU80R900P7AKMA1 | MOSFET N-CH 800V 6A TO251-3 | ||
| IPU80R1K0CEAKMA1 | MOSFET N-CH 800V 5.7A TO251 | ||
| IPU80R1K2P7AKMA1 | MOSFET N-CH 800V 4.5A TO251-3 | ||
| IPU80R1K4P7AKMA1 | MOSFET N-CH 800V 4A IPAK | ||
| IPU80R2K0P7AKMA1 | MOSFET N-CH 800V 3A TO251-3 | ||
| IPU80R4K5P7AKMA1 | MOSFET N-CH 800V 1.5A IPAK | ||
| IPU80R600P7AKMA1 | MOSFET N-CH 800V 8A TO251-3 | ||
| IPU80R750P7AKMA1 | MOSFET N-CH 800V 7A TO251-3 | ||
| IPU80R1K0CEBKMA1 | MOSFET N-Ch 800V 5.7A IPAK-3 | ||
| IPU80R1K4CEBKMA1 | MOSFET N-Ch 800V 3.9A IPAK-3 | ||
| IPU80R2K8CEBKMA1 | MOSFET N-Ch 800V 1.9A IPAK-3 | ||
Infineon Technologies |
IPU80R4K5P7AKMA1 | MOSFET | |
| IPU80R1K0CEAKMA1 | MOSFET CONSUMER | ||
| IPU80R1K4P7AKMA1 | MOSFET | ||
| IPU80R750P7AKMA1 | MOSFET | ||
| IPU80R900P7AKMA1 | MOSFET | ||
| IPU80R2K8CEBKMA1 | MOSFET N-Ch 800V 1.9A IPAK-3 | ||
| IPU80R1K0CE | MOSFET N-Ch 800V 5.7A IPAK-3 | ||
| IPU80R1K0CEBKMA1 , 2SJ21 | 全新原裝 | ||
| IPU80R1K4CE | MOSFET N-Ch 800V 3.9A IPAK-3 | ||
| IPU80R1K4CEBKMA1 , 2SJ21 | 全新原裝 | ||
| IPU80R1K4P7 | 全新原裝 | ||
| IPU80R1K4P7 . | 全新原裝 | ||
| IPU80R1K4P7(1) | 全新原裝 | ||
| IPU80R1KOCE | 全新原裝 | ||
| IPU80R2K0P7 | 全新原裝 | ||
| IPU80R2K8CE | - Bulk (Alt: IPU80R2K8CE) | ||
| IPU80R2K8CE , 2SJ219STL | 全新原裝 | ||
| IPU80R2K8CE(SP001100622) | 全新原裝 | ||
| IPU80R2K8CEBKMA1 , 2SJ22 | 全新原裝 | ||
| IPU80R4K5P7 | 全新原裝 | ||
| IPU8R1K0CE | 全新原裝 |