 | | | |
| PartNumber | IPW60R190C6 | IPW60R190E6 | IPW60R190C6FKSA1 |
| Description | MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6 | MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 | MOSFET HIGH POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 20.2 A | 20.2 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 170 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 151 W | 151 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 21.1 mm | 21.1 mm | 21.1 mm |
| Length | 16.13 mm | 16.13 mm | 16.13 mm |
| Series | CoolMOS C6 | CoolMOS E6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.21 mm | 5.21 mm | 5.21 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 240 | 240 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPW60R190C6FKSA1 IPW6R19C6XK SP000621160 | IPW60R190E6FKSA1 IPW6R19E6XK SP000797384 | IPW60R190C6 IPW6R19C6XK SP000621160 |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Qg Gate Charge | - | 63 nC | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 90 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW60R190P6 | MOSFET HIGH POWER_PRC/PRFRM | |
| IPW60R190C6 | MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6 | ||
| IPW60R190E6FKSA1 | MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 | ||
| IPW60R190E6 | MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 | ||
| IPW60R199CP | MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP | ||
| IPW60R199CPFKSA1 | MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP | ||
| IPW60R199CPFKSA1 | MOSFET N-CH 600V 16A TO-247 | ||
| IPW60R190C6FKSA1 | MOSFET N-CH 600V 20.2A TO247 | ||
| IPW60R190E6FKSA1 | MOSFET N-CH 600V 20.2A TO247 | ||
| IPW60R190P6FKSA1 | MOSFET N-CH 600V 20.2A TO247 | ||
Infineon Technologies |
IPW60R190C6FKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPW60R190C6XK | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW60R190C6FKSA1) | ||
| IPW60R190 | 全新原裝 | ||
| IPW60R190C6 6R190C6 | 全新原裝 | ||
| IPW60R190C6 , 2SJ268-DL | 全新原裝 | ||
| IPW60R190C6(6R190C6) | 全新原裝 | ||
| IPW60R190C6,6R190E6 | 全新原裝 | ||
| IPW60R190C6,IPW60R190P6 | 全新原裝 | ||
| IPW60R190C6. | 全新原裝 | ||
| IPW60R190C6S | 全新原裝 | ||
| IPW60R190E6 6R190E6 | 全新原裝 | ||
| IPW60R190E6(6R190E6) | 全新原裝 | ||
| IPW60R190E6,6R190E6,IPW6 | 全新原裝 | ||
| IPW60R190E6,IPW60R165CP, | 全新原裝 | ||
| IPW60R190P6 | - Bulk (Alt: IPW60R190P6) | ||
| IPW60R190P6 , 2SJ279 | 全新原裝 | ||
| IPW60R190P6 6R190P6 | 全新原裝 | ||
| IPW60R190P6,60R190 | 全新原裝 | ||
| IPW60R190P6,IPW60R190C6 | 全新原裝 | ||
| IPW60R199 | 全新原裝 | ||
| IPW60R199CP 6R199P | 全新原裝 | ||
| IPW60R199CP(6R199P) | 全新原裝 | ||
| IPW60R199CP(SP000089802) | 全新原裝 | ||
| IPW60R199CP,6R199P,IPW60 | 全新原裝 | ||
| IPW60R199CP-S | 全新原裝 | ||
| IPW60R199CP/6R199 | 全新原裝 | ||
| IPW60R199CP | Darlington Transistors MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP | ||
| IPW60R190C6 | Darlington Transistors MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6 | ||
| IPW60R190E6 | Darlington Transistors MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 |