IRF1010NST

IRF1010NSTRLPBF vs IRF1010NSTRRPBF vs IRF1010NSTRL

 
PartNumberIRF1010NSTRLPBFIRF1010NSTRRPBFIRF1010NSTRL
DescriptionMOSFET MOSFT 55V 84A 11mOhm 80nCMOSFET 55V 1 N-CH HEXFET 11mOhms 80nCMOSFET N-CH 55V 85A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current85 A84 A-
Rds On Drain Source Resistance11 mOhms11 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge120 nC80 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation180 W3.8 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min32 S--
Fall Time48 ns48 ns-
Product TypeMOSFETMOSFET-
Rise Time76 ns76 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time39 ns39 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesSP001571236SP001570042-
Unit Weight0.139332 oz0.139332 oz-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF1010NSTRLPBF MOSFET MOSFT 55V 84A 11mOhm 80nC
IRF1010NSTRL MOSFET N-CH 55V 85A D2PAK
IRF1010NSTRRPBF MOSFET N-CH 55V 85A D2PAK
IRF1010NSTRLPBF Darlington Transistors MOSFET MOSFT 55V 84A 11mOhm 80nC
Infineon / IR
Infineon / IR
IRF1010NSTRRPBF MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC
IRF1010NSTRLPBF-EL Trans MOSFET N-CH 55V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1010NSTRLPBF)
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