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| PartNumber | IRF1324STRL-7PP | IRF1324STRLPBF |
| Description | MOSFET 24V 1 N-CH HEXFET 1mOhm 180nC | MOSFET MOSFT 24V 340A 1.65mOhm 160nC Qg |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 24 V | 24 V |
| Id Continuous Drain Current | 429 A | 340 A |
| Rds On Drain Source Resistance | 800 Ohms | 1.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 180 nC | 160 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 2.3 mm |
| Length | 10 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - |
| Width | 9.25 mm | 6.22 mm |
| Brand | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 270 S | - |
| Fall Time | 93 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 240 ns | - |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | - |
| Typical Turn On Delay Time | 19 ns | - |
| Part # Aliases | SP001574484 | SP001550888 |
| Unit Weight | 0.056438 oz | 0.139332 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF1324STRL-7PP | MOSFET 24V 1 N-CH HEXFET 1mOhm 180nC | |
| IRF1324STRLPBF | MOSFET MOSFT 24V 340A 1.65mOhm 160nC Qg | ||
Infineon Technologies |
IRF1324STRL-7PP | MOSFET N-CH 24V 429A D2PAK-7 | |
| IRF1324STRLPBF | MOSFET N-CH 24V 195A D2PAK | ||
| IRF1324STRL-7PPBF | 全新原裝 | ||
| IRF1324STRRPBF | 全新原裝 |