 |  | | |
| PartNumber | IRF2805PBF | IRF2805PBF,IRF2805 | IRF2805PBF. |
| Description | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 175 A | - | - |
| Rds On Drain Source Resistance | 4.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 150 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 330 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 91 S | - | - |
| Fall Time | 110 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 120 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 68 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SP001559506 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF2805PBF | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | |
| IRF2805PBF | MOSFET N-CH 55V 75A TO-220AB | ||
| IRF2805PBF,IRF2805 | 全新原裝 | ||
| IRF2805PBF. | 全新原裝 | ||
| IRF2805PBF/INFINEON | 全新原裝 |