IRF3710ZS

IRF3710ZSTRLPBF vs IRF3710ZSPBF vs IRF3710ZSTRLPBF-CUT TAPE

 
PartNumberIRF3710ZSTRLPBFIRF3710ZSPBFIRF3710ZSTRLPBF-CUT TAPE
DescriptionMOSFET MOSFT 100V 59A 18mOhm 82nC QgMOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current59 A59 A-
Rds On Drain Source Resistance18 mOhms18 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge82 nC82 nC-
Pd Power Dissipation160 W160 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon / IRInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001570170SP001574628-
Unit Weight0.139332 oz0.139332 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Type-Automotive MOSFET-
Fall Time-56 ns-
Rise Time-77 ns-
Typical Turn Off Delay Time-41 ns-
Typical Turn On Delay Time-17 ns-
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRF3710ZSTRLPBF MOSFET MOSFT 100V 59A 18mOhm 82nC Qg
IRF3710ZSPBF MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
IRF3710ZSTRLPBF-CUT TAPE 全新原裝
Infineon Technologies
Infineon Technologies
IRF3710ZSTRRPBF MOSFET N-CH 100V 59A D2PAK
IRF3710ZSTRLPBF MOSFET N-CH 100V 59A D2PAK
IRF3710ZSPBF IGBT Transistors MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
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