| PartNumber | IRF5210STRLPBF | IRF5210STRRPBF | IRF5210STRR |
| Description | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | MOSFET P-CH 100V 40A D2PAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 60 mOhms | 60 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 120 nC | 180 nC | - |
| Pd Power Dissipation | 3.8 W | 3.8 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001554020 | SP001561786 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 10 S | - |
| Fall Time | - | 81 ns | - |
| Rise Time | - | 86 ns | - |
| Typical Turn Off Delay Time | - | 72 ns | - |
| Typical Turn On Delay Time | - | 14 ns | - |