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| PartNumber | IRF5210STRRPBF | IRF5210STRRPBF-CUT TAPE | IRF5210STRR |
| Description | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | MOSFET P-CH 100V 40A D2PAK | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 60 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 180 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 81 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 86 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 72 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SP001561786 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF5210STRRPBF | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | |
| IRF5210STRR | MOSFET P-CH 100V 40A D2PAK | ||
| IRF5210STRRPBF | Darlington Transistors MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | ||
| IRF5210STRRPBF-CUT TAPE | 全新原裝 |