 |  | | |
| PartNumber | IRF5803D2PBF | IRF5803D2 | IRF5803D2TR |
| Description | MOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS | MOSFET P-CH 40V 3.4A 8-SOIC | MOSFET P-CH 40V 3.4A 8-SOIC |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 3.4 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | FETKY MOSFET & Schottky Diode | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 550 ns | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 88 ns | - | - |
| Typical Turn On Delay Time | 43 ns | - | - |
| Part # Aliases | SP001554058 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF5803D2TRPBF | MOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nC | |
| IRF5803D2PBF | MOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS | ||
| IRF5803D2TRPBF. | 全新原裝 | ||
Infineon Technologies |
IRF5803D2 | MOSFET P-CH 40V 3.4A 8-SOIC | |
| IRF5803D2PBF | MOSFET P-CH 40V 3.4A 8-SOIC | ||
| IRF5803D2TR | MOSFET P-CH 40V 3.4A 8-SOIC | ||
| IRF5803D2TRPBF | MOSFET P-CH 40V 3.4A 8-SOIC |