 |  | | |
| PartNumber | IRF640PBF | IRF640PBF, | IRF640PBF,F640,IRF640 |
| Description | MOSFET N-CH 200V HEXFET MOSFET | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 3.3 A | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 36 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IRF | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 8.9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 17 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 8.2 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF640PBF | MOSFET N-CH 200V HEXFET MOSFET | |
Vishay |
IRF640PBF | MOSFET N-CH 200V 18A TO-220AB | |
| IRF640PBF, | 全新原裝 | ||
| IRF640PBF,F640,IRF640 | 全新原裝 | ||
| IRF640PBF,IRF640 | 全新原裝 |