IRF6618TRP

IRF6618TRPBF vs IRF6618TRPBF. vs IRF6618TRPBFIRF6618TR1PB

 
PartNumberIRF6618TRPBFIRF6618TRPBF.IRF6618TRPBFIRF6618TR1PB
DescriptionMOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDirectFET-MT--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current170 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge46 nC--
Pd Power Dissipation89 W--
ConfigurationSingle--
PackagingReel--
Height0.7 mm--
Length6.35 mm--
Transistor Type1 N-Channel--
Width5.05 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity4800--
SubcategoryMOSFETs--
Part # AliasesSP001529242--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF6618TRPBF MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
IRF6618TRPBF MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
IRF6618TRPBF. 全新原裝
IRF6618TRPBFIRF6618TR1PB 全新原裝
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