 |  | | |
| PartNumber | IRF710SPBF | IRF710PBF | IRF710STRLPBF |
| Description | MOSFET N-CH 400V HEXFET MOSFET D2-PA | MOSFET N-CH 400V HEXFET MOSFET | MOSFET N-Chan 400V 2.0 Amp |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Packaging | Tube | Tube | Reel |
| Series | IRF | IRF | IRF |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.050717 oz | 0.211644 oz | 0.050717 oz |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-220AB-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 400 V | - |
| Id Continuous Drain Current | - | 2 A | - |
| Rds On Drain Source Resistance | - | 3.6 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 17 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 36 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 1 S | - |
| Fall Time | - | 11 ns | - |
| Rise Time | - | 9.9 ns | - |
| Typical Turn Off Delay Time | - | 21 ns | - |
| Typical Turn On Delay Time | - | 8 ns | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF710SPBF | MOSFET N-CH 400V HEXFET MOSFET D2-PA | |
| IRF710PBF | MOSFET N-CH 400V HEXFET MOSFET | ||
| IRF710STRLPBF | MOSFET N-Chan 400V 2.0 Amp | ||
Infineon / IR |
IRF7171MTRPBF | MOSFET HEXFET 100V N CHANNEL | |
| IRF7105TRPBF. | Transistor Polarity:N and P Channel, Continuous Drain Current Id:3.5A, Drain Source Voltage Vds:25V, On Resistance Rds(on):0.083ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power | ||
| IRF7105TRPBF-CUT TAPE | 全新原裝 | ||
| IRF7105TRPBF,F7105,IRF71 | 全新原裝 | ||
| IRF7105TRPBFINFINEON | 全新原裝 | ||
| IRF7106TR | 全新原裝 | ||
| IRF7106TRPBF | 全新原裝 | ||
| IRF7107 , HZK24TR-S-E | 全新原裝 | ||
| IRF7108TR | 全新原裝 | ||
| IRF7108TRPBF | 全新原裝 | ||
| IRF710A | 全新原裝 | ||
| IRF710B | MOSFET 400V N-Channel B-FET | ||
| IRF710R4943 | 全新原裝 | ||
| IRF710R9437 | 全新原裝 | ||
| IRF710STRPBF | 全新原裝 | ||
| IRF711 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF711PBF | 全新原裝 | ||
| IRF711R | 全新原裝 | ||
| IRF712 | Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF7122TRPBF | 全新原裝 | ||
| IRF712PBF | 全新原裝 | ||
| IRF712STR | 全新原裝 | ||
| IRF7131PBF | 全新原裝 | ||
| IRF7131TRPBF | 全新原裝 | ||
Infineon Technologies |
IRF7106 | MOSFET N/P-CH 20V 3A/2.5A 8-SOIC | |
| IRF7171MTRPBF | MOSFET N-CH 100V 15A | ||
Vishay |
IRF710L | MOSFET N-CH 400V 2A TO-262 | |
| IRF710STRL | MOSFET N-CH 400V 2A D2PAK | ||
| IRF710STRR | MOSFET N-CH 400V 2A D2PAK | ||
| IRF710PBF | MOSFET N-CH 400V 2A TO-220AB | ||
| IRF710S | MOSFET N-CH 400V 2A D2PAK | ||
| IRF710SPBF | MOSFET N-CH 400V 2A D2PAK | ||
| IRF710STRLPBF | IGBT Transistors MOSFET N-Chan 400V 2.0 Amp |