 |  | | |
| PartNumber | IRF7210PBF | IRF7210 | IRF7210TR |
| Description | MOSFET 20V DUAL N-CH HEXFET 7mOhms 212nC | MOSFET, P, 14V, SO-8 | |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 16 A | - | - |
| Rds On Drain Source Resistance | 7 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 212 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3 ns | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 6.5 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Part # Aliases | SP001554134 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7210TRPBF | MOSFET MOSFT PCh -12V -16A 7mOhm 212nC | |
| IRF7210PBF | MOSFET 20V DUAL N-CH HEXFET 7mOhms 212nC | ||
| IRF7210TRPBF. | 全新原裝 | ||
| IRF7210 | MOSFET, P, 14V, SO-8 | ||
| IRF7210TR | 全新原裝 | ||
| IRF7210TRPBF,F7210 | 全新原裝 | ||
Infineon Technologies |
IRF7210PBF | MOSFET P-CH 12V 16A 8-SOIC | |
| IRF7210TRPBF | MOSFET P-CH 12V 16A 8-SOIC |