 | | | |
| PartNumber | IRF723 | IRF7233 TR | IRF7233D |
| Description | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| Manufacturer | IR | - | - |
| Product Category | FETs - Single | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7233TRPBF | MOSFET MOSFT PCh -12V -9.5A 20mOhm 49nC | |
| IRF723 | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF7233 TR | 全新原裝 | ||
| IRF7233D | 全新原裝 | ||
| IRF7233PFB | 全新原裝 | ||
| IRF7233T | 全新原裝 | ||
| IRF7233TRPBF. | 全新原裝 | ||
| IRF7233TRPFB | 全新原裝 | ||
| IRF723FI | 全新原裝 | ||
Infineon Technologies |
IRF7233 | MOSFET P-CH 12V 9.5A 8-SOIC | |
| IRF7233PBF | MOSFET P-CH 12V 9.5A 8-SOIC | ||
| IRF7233TR | MOSFET P-CH 12V 9.5A 8-SOIC | ||
| IRF7233TRPBF | MOSFET P-CH 12V 9.5A 8-SOIC |