IRF7389T

IRF7389TRPBF vs IRF7389TRPBF-CUT TAPE vs IRF7389TR

 
PartNumberIRF7389TRPBFIRF7389TRPBF-CUT TAPEIRF7389TR
DescriptionMOSFET MOSFT DUAL N/PCh 30V 7.3AMOSFET N/P-CH 30V 8-SOIC
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7.3 A--
Rds On Drain Source Resistance46 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Pd Power Dissipation2.5 W--
ConfigurationDual--
PackagingReel-Tape & Reel (TR)
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel, 1 P-Channel--
Width3.9 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001554234--
Unit Weight0.019048 oz--
Series--HEXFETR
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--N and P-Channel
Power Max--2.5W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--650pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C---
Rds On Max Id Vgs--29 mOhm @ 5.8A, 10V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--33nC @ 10V
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRF7389TRPBF MOSFET MOSFT DUAL N/PCh 30V 7.3A
IRF7389TRPBF-CUT TAPE 全新原裝
Infineon Technologies
Infineon Technologies
IRF7389TR MOSFET N/P-CH 30V 8-SOIC
IRF7389TRPBF MOSFET N/P-CH 30V 8-SOIC
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