 | | | |
| PartNumber | IRF743 | IRF7431 | IRF7432 |
| Description | Power Field-Effect Transistor, 8A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| Manufacturer | IR | - | - |
| Product Category | FETs - Single | - | - |
| Series | HEXFET | - | - |
| Packaging | Tube | - | - |
| Part Status | Obsolete | - | - |
| FET Type | P-Channel | - | - |
| Technology | MOSFET (Metal Oxide) | - | - |
| Drain to Source Voltage (Vdss) | 12V | - | - |
| Current Continuous Drain (Id) @ 25°C | 8.9A (Ta) | - | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | - | - |
| Vgs(th) (Max) @ Id | 900mV @ 250A | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V | - | - |
| Vgs (Max) | ±8V | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1877pF @ 10V | - | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 2.5W (Ta) | - | - |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 8.7A, 4.5V | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | 8-SO | - | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7433TRPBF | MOSFET MOSFT PCh -12V -8.9A 24mOhm 20nC | |
| IRF7433PBF | MOSFET 1 P-CH -12V HEXFET 24mOhms 20nC | ||
| IRF743 | Power Field-Effect Transistor, 8A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF7431 | 全新原裝 | ||
| IRF7432 | 全新原裝 | ||
| IRF7432Q | 全新原裝 | ||
| IRF7434TR | 全新原裝 | ||
| IRF743FI | 全新原裝 | ||
| IRF743P | 全新原裝 | ||
Infineon Technologies |
IRF7433 | MOSFET P-CH 12V 8.9A 8-SOIC | |
| IRF7433PBF | MOSFET P-CH 12V 8.9A 8-SOIC | ||
| IRF7433TR | MOSFET P-CH 12V 8.9A 8-SOIC | ||
| IRF7433TRPBF | MOSFET P-CH 12V 8.9A 8-SOIC | ||
| IRF7433TRPBF. | 全新原裝 | ||
| IRF743TRPBF | 全新原裝 |