IRF7465

IRF7465PBF vs IRF7465PBF,F7465 vs IRF7465TR

 
PartNumberIRF7465PBFIRF7465PBF,F7465IRF7465TR
DescriptionMOSFET 150V 1 N-CH HEXFET 280mOhms 10nC1900 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current1.9 A--
Rds On Drain Source Resistance280 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube-Reel
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel-1 N-Channel
TypeSmps MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time1.2 ns--
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesSP001563554--
Unit Weight0.019048 oz-0.019048 oz
Package Case--SOIC-8
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--1.9 A
Vds Drain Source Breakdown Voltage--150 V
Rds On Drain Source Resistance--280 mOhms
Qg Gate Charge--10 nC
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRF7465TRPBF MOSFET MOSFT 150V 1.9A 280mOhm 10nC
IRF7465PBF MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC
IRF7465TRPBF-CUT TAPE 全新原裝
IRF7465PBF,F7465 全新原裝
IRF7465TR 1900 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
Infineon Technologies
Infineon Technologies
IRF7465 MOSFET N-CH 150V 1.9A 8-SOIC
IRF7465PBF MOSFET N-CH 150V 1.9A 8-SOIC
IRF7465TRPBF MOSFET N-CH 150V 1.9A 8-SOIC
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