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| PartNumber | IRF7503TRPBF | IRF7503TRPBF-CUT TAPE | IRF7503TRPB |
| Description | MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8 | ||
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | Micro-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 2.4 A | - | - |
| Rds On Drain Source Resistance | 135 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 7.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.11 mm | - | - |
| Length | 3 mm | - | - |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Width | 3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 1.9 S | - | - |
| Fall Time | 5.3 ns | - | 5.3 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | 10 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | - | 12 ns |
| Typical Turn On Delay Time | 4.7 ns | - | 4.7 ns |
| Part # Aliases | SP001555496 | - | - |
| Unit Weight | 0.000901 oz | - | - |
| Series | - | - | HEXFETR |
| Package Case | - | - | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | Micro8 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 1.25W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 210pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 2.4A |
| Rds On Max Id Vgs | - | - | 135 mOhm @ 1.7A, 10V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 12nC @ 10V |
| Pd Power Dissipation | - | - | 1.25 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 2.4 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 135 mOhms |
| Qg Gate Charge | - | - | 7.8 nC |
| Forward Transconductance Min | - | - | 1.9 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF7503TRPBF | MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8 | |
| IRF7503TRPBF | MOSFET 2N-CH 30V 2.4A MICRO8 | ||
| IRF7503TRPBF-CUT TAPE | 全新原裝 | ||
| IRF7503TRPB | 全新原裝 |