IRF7601

IRF7601TRPBF vs IRF7601PBF vs IRF7601TR

 
PartNumberIRF7601TRPBFIRF7601PBFIRF7601TR
DescriptionMOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8MOSFET 20V 1 N-CH HEXFET 35mOhms 14nCMOSFET N-CH 20V 5.7A MICRO8
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMicro-8Micro-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current5.7 A5.7 A-
Rds On Drain Source Resistance35 mOhms35 mOhms-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge14 nC14 nC-
Pd Power Dissipation1.8 W1.8 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height1.11 mm1.11 mm-
Length3 mm3 mm-
Transistor Type1 N-Channel1 N-Channel-
Width3 mm3 mm-
BrandInfineon TechnologiesInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity400080-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001570552SP001551458-
Vgs th Gate Source Threshold Voltage-700 mV-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Forward Transconductance Min-6.1 S-
Fall Time-32 ns-
Moisture Sensitive-Yes-
Rise Time-47 ns-
Typical Turn Off Delay Time-24 ns-
Typical Turn On Delay Time-5.1 ns-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF7601TRPBF MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8
IRF7601PBF MOSFET N-CH 20V 5.7A MICRO-8
IRF7601TR MOSFET N-CH 20V 5.7A MICRO8
IRF7601TRPBF MOSFET N-CH 20V 5.7A MICRO8
Infineon / IR
Infineon / IR
IRF7601PBF MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC
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