 | | | |
| PartNumber | IRF7809AVPBF | IRF7809AVPBF-1 | IRF7809AVPBFDKR-ND |
| Description | MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC | ||
| Manufacturer | International Rectifier | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 540 mg | - | - |
| Mounting Style | SMD/SMT | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single Quad Drain Triple Source | - | - |
| Package Case | SOIC-8 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 10 ns | - | - |
| Rise Time | 36 ns | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Id Continuous Drain Current | 13.3 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 9 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 96 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Channel Mode | Enhancement | - | - |