IRF7853

IRF7853TRPBF vs IRF7853PBF

 
PartNumberIRF7853TRPBFIRF7853PBF
DescriptionMOSFET MOSFT 100V 8.3A 18mOhm 28nC QgMOSFET 100V 1 N-CH HEXFET 18mOhms 28nC
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSO-8SO-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current8.3 A8.3 A
Rds On Drain Source Resistance18 mOhms14.4 mOhms
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge28 nC28 nC
Pd Power Dissipation2.5 W2.5 W
ConfigurationSingleSingle
PackagingReelTube
Height1.75 mm1.75 mm
Length4.9 mm4.9 mm
Transistor Type1 N-Channel1 N-Channel
Width3.9 mm3.9 mm
BrandInfineon TechnologiesInfineon / IR
Product TypeMOSFETMOSFET
Factory Pack Quantity40003800
SubcategoryMOSFETsMOSFETs
Part # AliasesSP001554438SP001566352
Unit Weight0.019048 oz0.017870 oz
Vgs th Gate Source Threshold Voltage-4.9 V
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 150 C
Forward Transconductance Min-11 S
Fall Time-6 ns
Rise Time-6.6 ns
Typical Turn Off Delay Time-26 ns
Typical Turn On Delay Time-13 ns
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRF7853TRPBF MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg
IRF7853PBF MOSFET N-CH 100V 8.3A 8-SOIC
IRF7853TRPBF MOSFET N-CH 100V 8.3A 8-SOIC
Infineon / IR
Infineon / IR
IRF7853PBF MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC
IRF7853TRPBF-CUT TAPE 全新原裝
IRF7853TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:8.3A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0144ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.9V, Power D
IRF7853PBF 7853 全新原裝
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