 |  |  | |
| PartNumber | IRF8301MTRPBF | IRF8302MTRPBF | IRF8302MTR1PBF |
| Description | MOSFET MOSF N CH 30V 34A DIRECTFET MT | MOSFET 30V N-Channel HEXFET Power MOSFET | MOSFET N CH 30V 31A MX |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DirectFET-MT | SOP-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 192 A | 190 A | - |
| Rds On Drain Source Resistance | 1.9 mOhms | 2.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 51 nC | 35 nC | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | 104 W | - |
| Configuration | Single | Single | - |
| Tradename | DirectFET | DirectFET | - |
| Packaging | Reel | Reel | - |
| Height | 0.7 mm | 1.75 mm | - |
| Length | 6.35 mm | 4.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.05 mm | 3.9 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 150 S | - | - |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 4800 | 4800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Part # Aliases | SP001555752 | SP001555742 | - |
| Moisture Sensitive | - | Yes | - |
| Unit Weight | - | 0.019048 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF8301MTRPBF | MOSFET MOSF N CH 30V 34A DIRECTFET MT | |
| IRF8304MTRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
| IRF8302MTRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
| IRF8308MTRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
| IRF8302MTR1PBF | MOSFET N CH 30V 31A MX | ||
| IRF8304MTR1PBF | MOSFET N-CH 30V 28A MX | ||
| IRF8308MTR1PBF | MOSFET N-CH 30V 27A MX | ||
| IRF8301MTRPBF | MOSFET N-CH 30V 27A DIRECTFET MT | ||
| IRF8306MTR1PBF | IGBT Transistors MOSFET MOSFT 30V Gen 3.6mOhm mx 25nC Og | ||
| IRF8302MTRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
| IRF8308MTRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
| IRF8306MTRPBF | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 25nC | ||
| IRF8304MTRPBF | RF Bipolar Transistors MOSFET 30V N-Channel HEXFET Power MOSFET | ||
Vishay / Siliconix |
IRF830ASTRLPBF | MOSFET N-CH 500V HEXFET MOSFET D2-PA | |
| IRF830ALPBF | MOSFET N-Chan 500V 5.0 Amp | ||
| IRF830ASPBF | MOSFET N-CH 500V HEXFET MOSFET D2-PA | ||
| IRF830A | MOSFET RECOMMENDED ALT 844-IRF830APBF | ||
| IRF830ASTRL | MOSFET RECOMMENDED ALT 844-IRF830ASTRLPBF | ||
| IRF830AL | MOSFET RECOMMENDED ALT 844-IRF830ALPBF | ||
| IRF830APBF | MOSFET RECOMMENDED ALT 844-IRF830A | ||
Infineon / IR |
IRF8306MTR1PBF | MOSFET MOSFT 30V Gen 3.6mOhm mx 25nC Og | |
| IRF8304MTR1PBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
| IRF8308MTR1PBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
Vishay |
IRF830ALPBF | MOSFET N-CH 500V 5A TO262-3 | |
| IRF830APBF | MOSFET N-CH 500V 5A TO-220AB | ||
| IRF830ASPBF | MOSFET N-CH 500V 5A D2PAK | ||
| IRF830ASTRL | MOSFET N-CH 500V 5A D2PAK | ||
| IRF830AL | MOSFET N-CH 500V 5A TO262-3 | ||
| IRF830AS | MOSFET N-CH 500V 5A D2PAK | ||
| IRF830ASTRLPBF | MOSFET N-CH 500V 5A D2PAK | ||
| IRF830A | MOSFET N-Chan 500V 5.0 Amp | ||
| IRF8308MTRPBF-CUT TAPE | 全新原裝 | ||
| IRF830 CHN | 全新原裝 | ||
| IRF830-HF | 全新原裝 | ||
| IRF830/ SIHF830 | 全新原裝 | ||
| IRF830/IRF830PBF | 全新原裝 | ||
| IRF8302 | MOSFETs | ||
| IRF8302MTRPBF/84.08302.0 | 全新原裝 | ||
| IRF8304MTRPBF. | 全新原裝 | ||
| IRF8308MTRPBF. | 全新原裝 | ||
| IRF8308MTRPBT | 全新原裝 | ||
| IRF830APBF C | 全新原裝 | ||
| IRF830APBF,IRF830A | 全新原裝 | ||
| IRF830APBF,IRF830A,IRF83 | 全新原裝 | ||
| IRF830APBF,IRF830PBF, | 全新原裝 | ||
| IRF830B | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF830B IRF830 | 全新原裝 | ||
| IRF830B,IRF830BTSTU_FP00 | 全新原裝 | ||
| IRF830BBF | 全新原裝 | ||
STMicroelectronics |
IRF830 | MOSFET N-CH 500V 4.5A TO-220AB |