 |  | | |
| PartNumber | IRF8910PBF | IRF8910PBF-1 | IRF8910PBFCT-ND |
| Description | MOSFET 2N-CH 20V 10A 8-SOIC | ||
| Manufacturer | Infineon Technologies | - | IOR |
| Product Category | FETs - Arrays | - | FETs - Arrays |
| Series | HEXFETR | - | - |
| Packaging | Tube Alternate Packaging | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | 8-SO | - | - |
| Configuration | Dual | - | - |
| FET Type | 2 N-Channel (Dual) | - | - |
| Power Max | 2W | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 960pF @ 10V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 10A | - | - |
| Rds On Max Id Vgs | 13.4 mOhm @ 10A, 10V | - | - |
| Vgs th Max Id | 2.55V @ 250μA | - | - |
| Gate Charge Qg Vgs | 11nC @ 4.5V | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 4.1 ns | - | - |
| Rise Time | 10 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Rds On Drain Source Resistance | 18.3 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 9.7 ns | - | - |
| Typical Turn On Delay Time | 6.2 ns | - | - |
| Qg Gate Charge | 7.4 nC | - | - |
| Channel Mode | Enhancement | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF8910PBF | MOSFET 2N-CH 20V 10A 8-SOIC | |
| IRF8910PBF-1 | 全新原裝 | ||
| IRF8910PBFCT-ND | 全新原裝 |