IRF9530NP

IRF9530NPBF vs IRF9530NP vs IRF9530NPBF 30K

 
PartNumberIRF9530NPBFIRF9530NPIRF9530NPBF 30K
DescriptionMOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance200 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge38.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation79 W--
ConfigurationSingleSingle-
PackagingTubeTube-
Height15.65 mm--
Length10 mm--
Transistor Type1 P-Channel1 P-Channel-
Width4.4 mm--
BrandInfineon / IR--
Forward Transconductance Min3.2 S--
Fall Time46 ns46 ns-
Product TypeMOSFET--
Rise Time58 ns58 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time15 ns15 ns-
Part # AliasesSP001570634--
Unit Weight0.211644 oz0.211644 oz-
Package Case-TO-220-3-
Pd Power Dissipation-79 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 14 A-
Vds Drain Source Breakdown Voltage-- 100 V-
Vgs th Gate Source Threshold Voltage-- 4 V-
Rds On Drain Source Resistance-200 mOhms-
Qg Gate Charge-38.7 nC-
Forward Transconductance Min-3.2 S-
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRF9530NPBF MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC
IRF9530NP 全新原裝
IRF9530NPBF 30K 全新原裝
IRF9530NPBF (ROHS) 全新原裝
IRF9530NPBF IR 全新原裝
IRF9530NPBF,F9530N 全新原裝
IRF9530NPBF,F9530N,IRF95 全新原裝
IRF9530NPBF,IRF9530N, 全新原裝
IRF9530NPBF-C 全新原裝
IRF9530NPBF-MX 全新原裝
IRF9530NPBF-PHI 全新原裝
Infineon Technologies
Infineon Technologies
IRF9530NPBF MOSFET P-CH 100V 14A TO-220AB
Top