 |  | | |
| PartNumber | IRFB38N20DPBF | IRFB38N20D | IRFB38N20D,IRFB38N20DPBF |
| Description | MOSFET MOSFT 200V 44A 54mOhm 60nC | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 44 A | - | - |
| Rds On Drain Source Resistance | 54 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 60 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 320 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 47 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 95 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 29 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | SP001556010 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFB38N20DPBF | MOSFET MOSFT 200V 44A 54mOhm 60nC | |
| IRFB38N20D | 全新原裝 | ||
| IRFB38N20D,IRFB38N20DPBF | 全新原裝 | ||
| IRFB38N20DPF | 全新原裝 | ||
Infineon Technologies |
IRFB38N20DPBF | MOSFET N-CH 200V 43A TO-220AB |