 | |  | |
| PartNumber | IRFH5106TRPBF | IRFH5106TR2PBF | IRFH5106TRPBF. |
| Description | MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC | MOSFET MOSFT 60V Gen 10.7 4.98mOhm 56.2nC Qg | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | PQFN-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 100 A | 21 A | - |
| Rds On Drain Source Resistance | 5.6 mOhms | 5.6 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 50 nC | 50 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 114 W | 3.6 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.83 mm | 0.83 mm | - |
| Length | 6 mm | 6 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5 mm | 5 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 9.5 ns | 9.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | 13 ns | - |
| Factory Pack Quantity | 4000 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 8.1 ns | - | - |
| Part # Aliases | SP001577936 | SP001551906 | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Forward Transconductance Min | - | 82 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH5106TRPBF | MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC | |
| IRFH5106TR2PBF | MOSFET MOSFT 60V Gen 10.7 4.98mOhm 56.2nC Qg | ||
| IRFH5106TRPBF. | 全新原裝 | ||
Infineon Technologies |
IRFH5106TR2PBF | MOSFET N-CH 60V 100A 5X6 PQFN | |
| IRFH5106TRPBF | IGBT Transistors MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC |