 | |  | |
| PartNumber | IRFH7190TRPBF | IRFH7191TRPBF | IRFH7190ATRPBF |
| Description | MOSFET TRENCH_MOSFETS | MOSFET HEXFET 100V N CHANNEL | MOSFET N-CH 8-TDSON |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | PQFN-8 | - |
| Tradename | StrongIRFET | StrongIRFET | - |
| Packaging | Reel | Reel | - |
| Height | 0.83 mm | 0.83 mm | - |
| Length | 6 mm | 6 mm | - |
| Width | 5 mm | 5 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 4000 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001560410 | SP001556364 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 80 A | - |
| Rds On Drain Source Resistance | - | 8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3.6 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 26 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 104 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 112 S | - |
| Fall Time | - | 3.6 ns | - |
| Rise Time | - | 6.1 ns | - |
| Typical Turn Off Delay Time | - | 10.6 ns | - |
| Typical Turn On Delay Time | - | 4.5 ns | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH7194TRPBF | MOSFET HEXFET 100V N CHANNEL | |
| IRFH7190TRPBF | MOSFET TRENCH_MOSFETS | ||
| IRFH7191TRPBF | MOSFET HEXFET 100V N CHANNEL | ||
Infineon Technologies |
IRFH7190ATRPBF | MOSFET N-CH 8-TDSON | |
| IRFH7190TRPBF | MOSFET N-CH 100V 15A | ||
| IRFH7191TRPBF | MOSFET N-CH 100V 15A | ||
| IRFH7194TRPBF | MOSFET N-CH 100V 11A |