IRFH7932TRP

IRFH7932TRPBF vs IRFH7932TRPB vs IRFH7932TRPBF.

 
PartNumberIRFH7932TRPBFIRFH7932TRPBIRFH7932TRPBF.
DescriptionMOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current104 A--
Rds On Drain Source Resistance3.9 mOhms--
Vgs th Gate Source Threshold Voltage2.35 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.4 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
TradenameStrongIRFET--
PackagingReelReel-
Height1 mm--
Length6 mm--
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width5 mm--
BrandInfineon / IR--
Forward Transconductance Min59 S--
Fall Time20 ns20 ns-
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time48 ns48 ns-
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns23 ns-
Typical Turn On Delay Time20 ns20 ns-
Part # AliasesSP001556482--
Package Case-PQFN-8-
Pd Power Dissipation-3.4 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-104 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1.35 V to 2.35 V-
Rds On Drain Source Resistance-3.9 mOhms-
Qg Gate Charge-34 nC-
Forward Transconductance Min-59 S-
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRFH7932TRPBF MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
IRFH7932TRPB 全新原裝
IRFH7932TRPBF. 全新原裝
Infineon Technologies
Infineon Technologies
IRFH7932TRPBF Darlington Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
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