 |  |  | |
| PartNumber | IRFH8318TRPBF | IRFH8318TRPBF. | IRFH8318TR2PBF |
| Description | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC | Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0025ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Dis | IGBT Transistors MOSFET MOSFT 30V 50A 3.1mOhm 21nC Qg |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 4.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 3.6 W | - | - |
| Configuration | Single | - | Single |
| Packaging | Reel | - | Reel |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 81 S | - | - |
| Fall Time | 12 ns | - | 12 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 33 ns | - | 33 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | 18 ns |
| Typical Turn On Delay Time | 15 ns | - | 15 ns |
| Part # Aliases | SP001572710 | - | - |
| Package Case | - | - | PQFN-8 |
| Pd Power Dissipation | - | - | 3.6 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 27 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 3.1 mOhms |
| Qg Gate Charge | - | - | 41 nC |
| Forward Transconductance Min | - | - | 81 S |
| Channel Mode | - | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH8318TRPBF | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC | |
Infineon Technologies |
IRFH8318TRPBF | MOSFET N-CH 30V 50A 5X6 PQFN | |
| IRFH8318TR2PBF | IGBT Transistors MOSFET MOSFT 30V 50A 3.1mOhm 21nC Qg | ||
| IRFH8318TRPBF. | Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0025ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Dis |