 | | |
| PartNumber | IRFH8334TRPBF | IRFH8334TR2PBF |
| Description | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | MOSFET 30V 999A SO-8 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 25 A | 14 A |
| Rds On Drain Source Resistance | 13.5 mOhms | 9 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 7.1 nC | 7.1 nC |
| Pd Power Dissipation | 30 W | 3.2 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Height | 0.83 mm | 0.83 mm |
| Length | 6 mm | 6 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 5 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001577860 | SP001564126 |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | 44 S |
| Fall Time | - | 4.6 ns |
| Rise Time | - | 14 ns |
| Typical Turn Off Delay Time | - | 7 ns |
| Typical Turn On Delay Time | - | 8.3 ns |
| Unit Weight | - | 0.017637 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFH8334TRPBF | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | |
| IRFH8334TRPBF | MOSFET N-CH 30V 44A 5X6 PQFN | ||
| IRFH8334TR2PBF | IGBT Transistors MOSFET 30V 999A SO-8 | ||
Infineon / IR |
IRFH8334TR2PBF | MOSFET 30V 999A SO-8 | |
| IRFH8334TRPBF-CUT TAPE | 全新原裝 |