 |  | | |
| PartNumber | IRFP4668PBF | IRFP4668 | IRFP4668PF |
| Description | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 130 A | - | - |
| Rds On Drain Source Resistance | 9.7 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 161 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 520 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 20.7 mm | - | - |
| Length | 15.87 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.31 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 150 S | - | - |
| Fall Time | 74 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 105 ns | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 64 ns | - | - |
| Typical Turn On Delay Time | 41 ns | - | - |
| Part # Aliases | SP001572854 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFP4668PBF | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | |
| IRFP4668PBF | MOSFET N-CH 200V 130A TO-247AC | ||
| IRFP4668 | 全新原裝 | ||
| IRFP4668PF | 全新原裝 |