IRFR120Z

IRFR120ZPBF vs IRFR120ZTR vs IRFR120Z

 
PartNumberIRFR120ZPBFIRFR120ZTRIRFR120Z
DescriptionMOSFET 100V 1 N-CH HEXFET 26mOhms 70nCMOSFET N-CH 100V 8.7A DPAKMOSFET N-CH 100V 8.7A DPAK
ManufacturerInfineon-IR/VISHAY
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current8.7 A--
Rds On Drain Source Resistance190 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation35 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeAutomotive MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time23 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time8.3 ns--
Part # AliasesSP001556832--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRFR120ZTRPBF MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC
IRFR120ZTR MOSFET N-CH 100V 8.7A DPAK
IRFR120ZTRL MOSFET N-CH 100V 8.7A DPAK
IRFR120Z MOSFET N-CH 100V 8.7A DPAK
IRFR120ZPBF MOSFET N-CH 100V 8.7A DPAK
IRFR120ZTRPBF MOSFET N-CH 100V 8.7A DPAK
IRFR120ZTRLPBF IGBT Transistors MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg
Infineon Technologies
Infineon Technologies
IRFR120ZPBF MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC
Infineon / IR
Infineon / IR
IRFR120ZTRLPBF MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg
IRFR120ZTRPBF-CUT TAPE 全新原裝
IRFR120Z/SL10N06D 全新原裝
IRFR120ZTRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:8.7A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.15ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
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