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| PartNumber | IRFR3410PBF | IRFR3410PBF , 2SK1576 | IRFR3410PBF,IRFR3410TRPB |
| Description | MOSFET N-CH 100V 31A DPAK | ||
| Manufacturer | IR | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 110 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 13 ns | - | - |
| Rise Time | 27 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 31 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Rds On Drain Source Resistance | 39 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Qg Gate Charge | 37 nC | - | - |
| Forward Transconductance Min | 33 S | - | - |
| Channel Mode | Enhancement | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFR3410PBF | MOSFET N-CH 100V 31A DPAK | |
| IRFR3410PBF , 2SK1576 | 全新原裝 | ||
| IRFR3410PBF,IRFR3410TRPB | 全新原裝 |