IRFR45

IRFR4510TRPBF vs IRFR4510PBF

 
PartNumberIRFR4510TRPBFIRFR4510PBF
DescriptionMOSFET 100V 63A 13.9mOhm HEXFET 143W 54nCMOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current63 A63 A
Rds On Drain Source Resistance13.9 mOhms11.1 mOhms
Vgs th Gate Source Threshold Voltage3 V4 V
Qg Gate Charge54 nC54 nC
Pd Power Dissipation143 W143 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameStrongIRFETStrongIRFET
PackagingReelTube
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon / IR
Forward Transconductance Min62 S62 S
Fall Time34 ns34 ns
Product TypeMOSFETMOSFET
Rise Time42 ns42 ns
Factory Pack Quantity20003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time42 ns42 ns
Typical Turn On Delay Time18 ns18 ns
Part # AliasesSP001567870SP001564880
Unit Weight0.139332 oz0.139332 oz
Vgs Gate Source Voltage-20 V
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Type-HEXFET Power MOSFET
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRFR4510TRPBF MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
IRFR4510PBF Darlington Transistors MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
IRFR4510TRPBF MOSFET N CH 100V 56A DPAK
Infineon / IR
Infineon / IR
IRFR4510PBF MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
IRFR4510TRPBF-CUT TAPE 全新原裝
IRFR4510 全新原裝
IRFR4510TR 全新原裝
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