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| PartNumber | IRFR4510TRPBF | IRFR4510TRPBF-CUT TAPE | IRFR4510TR |
| Description | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | ||
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 63 A | - | - |
| Rds On Drain Source Resistance | 13.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Qg Gate Charge | 54 nC | - | - |
| Pd Power Dissipation | 143 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | StrongIRFET | - | StrongIRFET |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 62 S | - | - |
| Fall Time | 34 ns | - | 34 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 42 ns | - | 42 ns |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 42 ns | - | 42 ns |
| Typical Turn On Delay Time | 18 ns | - | 18 ns |
| Part # Aliases | SP001567870 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Series | - | - | HEXFETR |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D-Pak |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 143W |
| Drain to Source Voltage Vdss | - | - | 100V |
| Input Capacitance Ciss Vds | - | - | 3031pF @ 50V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 56A (Tc) |
| Rds On Max Id Vgs | - | - | 13.9 mOhm @ 38A, 10V |
| Vgs th Max Id | - | - | 4V @ 100μA |
| Gate Charge Qg Vgs | - | - | 81nC @ 10V |
| Pd Power Dissipation | - | - | 143 W |
| Id Continuous Drain Current | - | - | 63 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 13.9 mOhms |
| Qg Gate Charge | - | - | 54 nC |
| Forward Transconductance Min | - | - | 62 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFR4510TRPBF | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | |
| IRFR4510TRPBF | MOSFET N CH 100V 56A DPAK | ||
| IRFR4510TRPBF-CUT TAPE | 全新原裝 | ||
| IRFR4510TR | 全新原裝 |