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| PartNumber | IRFS38N20DTRLP-CUT TAPE | IRFS38N20DTRL | IRFS38N20DTRLP |
| Description | MOSFET Transistor, N-Channel, TO-263AB | MOSFET N-CH 200V 43A D2PAK | |
| Manufacturer | - | IR | IR |
| Product Category | - | FETs - Single | FETs - Single |
| Packaging | - | Reel | Reel |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | TO-252-3 | TO-252-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 320 W | 320 W |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 47 ns | 47 ns |
| Rise Time | - | 95 ns | 95 ns |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Id Continuous Drain Current | - | 44 A | 44 A |
| Vds Drain Source Breakdown Voltage | - | 200 V | 200 V |
| Rds On Drain Source Resistance | - | 54 mOhms | 54 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 29 ns | 29 ns |
| Typical Turn On Delay Time | - | 16 ns | 16 ns |
| Qg Gate Charge | - | 60 nC | 60 nC |
| Channel Mode | - | Enhancement | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| IRFS38N20DTRLP-CUT TAPE | 全新原裝 | ||
| IRFS38N20DTRL | MOSFET Transistor, N-Channel, TO-263AB | ||
| IRFS38N20DTRLPBF | 全新原裝 | ||
Infineon Technologies |
IRFS38N20DTRLP | MOSFET N-CH 200V 43A D2PAK |