 | | |
| PartNumber | IRFS4229TRLPBF | IRFS4229PBF |
| Description | MOSFET MOSFT 250V 45A 48mOhm 72nC Qg | MOSFET 250V 1 N-CH HEXFET PDP SWITCH |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V |
| Id Continuous Drain Current | 45 A | 45 A |
| Rds On Drain Source Resistance | 48 mOhms | 42 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 72 nC | 72 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 330 W | 330 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Tube |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 83 S | 83 S |
| Fall Time | 21 ns | 21 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 31 ns | 31 ns |
| Factory Pack Quantity | 800 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 30 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns |
| Part # Aliases | SP001557392 | SP001576214 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V |
| Type | - | PDP Switch |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFS4229TRLPBF | MOSFET MOSFT 250V 45A 48mOhm 72nC Qg | |
| IRFS4229PBF | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | ||
Infineon Technologies |
IRFS4229PBF | MOSFET N-CH 250V 45A D2PAK | |
| IRFS4229TRLPBF | MOSFET N-CH 250V 45A D2PAK | ||
| IRFS4229TRLPBF-CUT TAPE | 全新原裝 | ||
| IRFS4229 | MOSFET, N-CH, 250V, 45A, TO-263-3 | ||
| IRFS4229TRLPBF,IRFS4229P | 全新原裝 |