IRFSL41

IRFSL4127PBF vs IRFSL4115PBF vs IRFSL41N15D

 
PartNumberIRFSL4127PBFIRFSL4115PBFIRFSL41N15D
DescriptionMOSFET MOSFT 200V 76A 23.2mOhm 100nCDarlington Transistors MOSFET MOSFT 150V 99A 12.1mOhm 77nCMOSFET N-CH 150V 41A TO-262
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current72 A--
Rds On Drain Source Resistance22 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge100 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height9.45 mm--
Length10.2 mm--
Transistor Type1 N-Channel1 N-Channel-
Width4.5 mm--
BrandInfineon / IR--
Forward Transconductance Min79 S--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time56 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesSP001557538--
Unit Weight0.084199 oz0.084199 oz-
Package Case-I2PAK-3-
Pd Power Dissipation-375 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-99 A-
Vds Drain Source Breakdown Voltage-150 V-
Rds On Drain Source Resistance-10.3 mOhms-
Qg Gate Charge-77 nC-
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRFSL4127PBF MOSFET MOSFT 200V 76A 23.2mOhm 100nC
Infineon Technologies
Infineon Technologies
IRFSL4127PBF MOSFET N-CH 200V 72A TO-262
IRFSL4115PBF Darlington Transistors MOSFET MOSFT 150V 99A 12.1mOhm 77nC
IRFSL41N15D MOSFET N-CH 150V 41A TO-262
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