 | |  | |
| PartNumber | IRFU220NPBF | IRFU220PBF | IRFU220N |
| Description | MOSFET MOSFT 200V 5A 600mOhm 15nC | MOSFET N-CH 200V HEXFET MOSFET I-PAK | MOSFET N-CH 200V 5A I-PAK |
| Manufacturer | Infineon | Vishay | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 600 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 15 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 43 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.38 mm | - | - |
| Brand | Infineon Technologies | Vishay / Siliconix | - |
| Forward Transconductance Min | 2.6 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 3000 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 6.4 ns | - | - |
| Part # Aliases | SP001567710 | - | - |
| Unit Weight | 0.139332 oz | 0.011640 oz | - |
| Series | - | IRFR/U | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFU220NPBF | MOSFET MOSFT 200V 5A 600mOhm 15nC | |
| IRFU220NPBF | IGBT Transistors MOSFET MOSFT 200V 5A 600mOhm 15nC | ||
| IRFU220N | MOSFET N-CH 200V 5A I-PAK | ||
Vishay / Siliconix |
IRFU224PBF | MOSFET N-CH 250V HEXFET MOSFET I-PAK | |
| IRFU220PBF | MOSFET N-CH 200V HEXFET MOSFET I-PAK | ||
| IRFU224 | MOSFET RECOMMENDED ALT 844-IRFU224PBF | ||
ON Semiconductor / Fairchild |
IRFU220BTU-AM002 | MOSFET N-Ch 200V 4.6A 0.8OHM | |
Vishay |
IRFU224PBF | IGBT Transistors MOSFET N-Chan 250V 3.8 Amp | |
| IRFU220PBF | MOSFET N-CH 200V 4.8A I-PAK | ||
| IRFU224 | MOSFET N-CH 250V 3.8A I-PAK | ||
| IRFU220BTU_AM002 | RF Bipolar Transistors MOSFET N-Ch 200V 4.6A 0.8OHM | ||
| IRFU220 | MOSFET N-Chan 200V 4.8 Amp | ||
| IRFU220,IRFU220NPBF, | 全新原裝 | ||
| IRFU220A | 全新原裝 | ||
| IRFU220B | 全新原裝 | ||
| IRFU220BTU | 全新原裝 | ||
| IRFU220BTU,IRFU220,FU220 | 全新原裝 | ||
| IRFU220BTU,IRFU220B | 全新原裝 | ||
| IRFU220BTU,IRFU220B, | 全新原裝 | ||
| IRFU220N FU220N | 全新原裝 | ||
| IRFU220NPBF,IRFU220N,FU2 | 全新原裝 | ||
| IRFU221 | Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| IRFU222 | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| IRFU222PBF | 全新原裝 | ||
| IRFU224A | 全新原裝 | ||
| IRFU224BTU-FP001 | 全新原裝 | ||
ON Semiconductor |
IRFU220BTU-AM002 | MOSFET N-CH 200V 4.6A IPAK | |
| IRFU220BTU_F080 | MOSFET N-CH 200V 4.6A IPAK | ||
| IRFU220BTU_FP001 | MOSFET N-CH 200V 4.6A IPAK | ||
| IRFU220_R4941 | MOSFET N-CH 200V 4.6A I-PAK |