IRG4IBC30W

IRG4IBC30WPBF vs IRG4IBC30W vs IRG4IBC30WPBF.

 
PartNumberIRG4IBC30WPBFIRG4IBC30WIRG4IBC30WPBF.
DescriptionIGBT Transistors 600V Warp 60-150kHzIGBT 600V 17A 45W TO220FP
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220FP-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C17 A--
Pd Power Dissipation45 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max17 A--
Height9.1 mm--
Length10.6 mm--
Width4.8 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
Part # AliasesSP001533652--
Unit Weight0.081130 oz--
Series---
Package Case-TO-220-3 Full Pack-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB Full-Pak-
Power Max-45W-
Reverse Recovery Time trr---
Current Collector Ic Max-17A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-92A-
Vce on Max Vge Ic-2.7V @ 15V, 12A-
Switching Energy-130μJ (on), 130μJ (off)-
Gate Charge-51nC-
Td on off 25°C-25ns/99ns-
Test Condition-480V, 12A, 23 Ohm, 15V-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IRG4IBC30WPBF IGBT Transistors 600V Warp 60-150kHz
IRG4IBC30WPBF IGBT Transistors 600V Warp 60-150kHz
IRG4IBC30W IGBT 600V 17A 45W TO220FP
IRG4IBC30WPBF. 全新原裝
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