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| PartNumber | IRG8P50N120KDEPBF | IRG8P50N120KD-EPBF | IRG8P50N120KDPBF |
| Description | IGBT Transistors 1200V IGBT GEN8 | IGBT Transistors 1200V IGBT GEN8 | |
| Manufacturer | - | Infineon Technologies | Infineon Technologies |
| Product Category | - | IGBTs - Single | IGBTs - Single |
| Series | - | - | - |
| Packaging | - | Tube | Tube |
| Unit Weight | - | 6500 g | - |
| Mounting Style | - | Through Hole | Through Hole |
| Package Case | - | TO-247AD-3 | TO-247-3 |
| Input Type | - | Standard | Standard |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-247AD | TO-247AC |
| Configuration | - | Single | Single |
| Power Max | - | 350W | 350W |
| Reverse Recovery Time trr | - | 170ns | 170ns |
| Current Collector Ic Max | - | 80A | 80A |
| Voltage Collector Emitter Breakdown Max | - | 1200V | 1200V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | 105A | 105A |
| Vce on Max Vge Ic | - | 2V @ 15V, 35A | 2V @ 15V, 35A |
| Switching Energy | - | 2.3mJ (on), 1.9mJ (off) | 2.3mJ (on), 1.9mJ (off) |
| Gate Charge | - | 315nC | 315nC |
| Td on off 25°C | - | 35ns/190ns | 35ns/190ns |
| Test Condition | - | 600V, 35A, 5 Ohm, 15V | 600V, 35A, 5 Ohm, 15V |
| Pd Power Dissipation | - | 350 W | 350 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Collector Emitter Voltage VCEO Max | - | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | - | 1.7 V | 1.7 V |
| Continuous Collector Current at 25 C | - | 80 A | 80 A |
| Gate Emitter Leakage Current | - | 300 nA | 300 nA |
| Maximum Gate Emitter Voltage | - | 30 V | 30 V |
| Continuous Collector Current Ic Max | - | 50 A | 50 A |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| IRG8P50N120KDEPBF | 全新原裝 | ||
Infineon Technologies |
IRG8P50N120KD-EPBF | IGBT Transistors 1200V IGBT GEN8 | |
| IRG8P50N120KDPBF | IGBT Transistors 1200V IGBT GEN8 |