 |  | | |
| PartNumber | IRGIB10B60KD1P | IRGIB10B60KD1P. | IRGIB10B60KD1PBF |
| Description | IGBT Transistors 600V Low-Vceon | ||
| Manufacturer | Infineon | - | IR |
| Product Category | IGBT Transistors | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.1 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 16 A | - | - |
| Pd Power Dissipation | 44 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Packaging | Tube | - | - |
| Height | 9.02 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 4.83 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | SP001549794 | - | - |
| Unit Weight | 0.081130 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRGIB10B60KD1P | IGBT Transistors 600V Low-Vceon | |
Infineon Technologies |
IRGIB10B60KD1P | IGBT Transistors 600V Low-Vceon | |
| IRGIB10B60KD1P. | 全新原裝 | ||
| IRGIB10B60KD1PBF | 全新原裝 | ||
| IRGIB10B60KD1PBF. | 全新原裝 |